Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

您目前所在的位置:首页 - 期刊简介 - 详细页面


Transactions of Nonferrous Metals Society of China

Vol. 21    No. 5    May 2011

[PDF Download]        


New resistivity/dopant density model for compensated-Si
Dominic LEBLANC1, Karol PUTYERA2

1. Becancour Silicon Inc., Becancour G9H 2V8, Canada;
2. Evans Analytical Group, Syracuse, NY 13211, USA

Abstract:Models establishing relationships between electrical resistivity and dopant densities of silicon wafers/bricks are not applicable for compensated-Si, such as upgraded metallurgical grade silicon UMG-Si. To date, no satisfactory theoretical model has been able to explain precisely the variety of new experimental results and observations related to compensated-Si. In this study, a new approach considering equilibrium ionisation constants according to electrolyte theory was proposed, which reproduce, for single-doped Si, Thurber’s curves of charge carrier’s mobilities. When more than one doping species are involved, as in compensated-Si, a numerical algorithm has to be used for solving multiple equilibrium systems. The study of such systems demonstrates a particular behaviour known from buffered solutions. Equilibrium constants were calculated from thermodynamic properties of chemical compounds, and a new general theory was proposed using available knowledge of electrochemistry (Nernst equation, Butler-Volmer equation). Considering that the silicon/dopant systems constitute a weak electrolyte solid solution, it is concluded that the electrolyte solution theory provides a good physical model and mathematical framework to get a better understanding of solar cell’s behaviour.


Key words: silicon; resistivity; compensated; UMG; boron; phosphorus

ISSN 1004-0609
CN 43-1238/TG

ISSN 1003-6326
CN 43-1239/TG

主管:中国科学技术协会 主办:中国有色金属学会 承办:中南大学
湘ICP备09001153号 版权所有:《中国有色金属学报》编辑部
地 址:湖南省长沙市岳麓山中南大学内 邮编:410083
电 话:0731-88876765,88877197,88830410   传真:0731-88877197   电子邮箱