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中国有色金属学报

ZHONGGUO YOUSEJINSHU XUEBAO

第26卷    第6期    总第207期    2016年6月

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文章编号:1004-0609(2016)-06-1214-08
基于复合靶溅射制备Mg2Si薄膜及其热电性能
陈志坚,李建新,周白杨,温翠莲

(福州大学 材料科学与工程学院,福州 350116)

摘 要: 采用射频磁控溅射Mg-Si二元复合靶制备Mg2Si热电薄膜,研究溅射功率、真空退火温度及退火时间对其性能的影响,探究较优的Mg2Si薄膜制备工艺。利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、霍尔效应测试仪、薄膜Seebeck系数测量系统对薄膜特性进行测试。由薄膜断面的能谱分析可知,Mg、Si元素在薄膜中分布均匀,且薄膜中Mg与Si摩尔比为2:1,与Mg2Si相的组成摩尔比相符;XRD测试结果表明,溅射功率、真空退火温度及退火时间对薄膜的成膜质量均有影响。霍尔效应测试及Seebeck系数测量结果表明:所制备的Mg2Si薄膜均为n型半导体薄膜,其Seebeck系数的取值范围为-278.648~-483.562 μV/K,薄膜电导率的取值范围为1.240~46.926 S/cm;120 W溅射功率下沉积的Mg2Si薄膜经400 ℃真空退火保温3 h后,获得最大功率因子,其值为0.364 mW/(m?K2)。

 

关键词: Mg2Si薄膜;射频磁控溅射;工艺优化;热电性能

Thermoelectric properties of Mg2Si thin films prepared by magnetron sputtering based on composite target
CHEN Zhi-jian, LI Jian-xin, ZHOU Bai-yang, WEN Cui-lian

School of Materials Science and Engineering, Fuzhou University, Fuzhou 350116, China

Abstract:The Mg2Si thermoelectric thin films were fabricated by radio frequency magnetron sputtering with the Mg-Si binary composite target. The effects of sputtering power, vacuum annealing temperature and annealing time on the qualities of Mg2Si thin films were studied to find out the optimal preparation process. The properties of the thin films were tested by scanning electron microscope (SEM), X-ray diffraction (XRD), Hall effect tester, film Seebeck coefficient measurement system. As showed in energy dispersive X-ray spectrum of the Mg2Si thin film profile, Mg and Si in the thin films distribute uniformly and the mole ratio of Mg to Si in thin films is about 2:1, which is consistent with the mole ratio of Mg2Si phase. XRD results show that the sputtering power, vacuum annealing temperature and annealing time have effects on the film quality. The test results of Hall measurement and Seebeck coefficients measurement reveal that all the samples are n-type. The Seebeck coefficients are in the range of -278.648- -483.562 μV/K, and the electrical conductivities are in the range of 1.240-46.926 S/cm. Among all, the Mg2Si thin film deposited with 120 W and annealed at 400 ℃ for 3 h have the highest power factor of 0.364 mW/(m?K2).

 

Key words: Mg2Si thin film; radio frequency magnetron sputtering; optimal preparation process; thermoelectric properties

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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