Transactions of Nonferrous Metals Society of China The Chinese Journal of Nonferrous Metals

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中国有色金属学报

ZHONGGUO YOUSEJINSHU XUEBAO

第27卷    第6期    总第219期    2017年6月

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文章编号:1004-0609(2017)-06-1199-09
一维钨纳米结构阵列的可控制备
王 超1, 2,贺跃辉1

(1. 中南大学 粉末冶金研究院,长沙 410083;2. 中南大学 出版社,长沙 410083)

摘 要: 采用金属催化法结合化学气相沉积法制备一维W纳米结构阵列,对一维W纳米结构阵列可控制备进行系统的研究。结果表明:一维W纳米结构阵列的直径主要受到催化剂和N2流量的影响,随着催化剂颗粒尺寸的减小或者N2流量的减小,催化生长后W纳米线直径的尺寸也相应变小;一维W纳米结构阵列的长度主要受到生长时间的影响,生长时间的延长会使W纳米线阵列的长度也相应的增加,有利于超长W纳米线阵列的合成;一维W纳米结构阵列的密度主要受到催化剂和WO3粉末粒径的影响,随着催化剂颗粒的密度的增加或者WO3粒径的减小,W纳米线阵列的密度也相应增加;一维W纳米结构阵列的形貌主要受到生长温度和基片材料的影响。

 

关键词: 一维纳米材料;钨纳米结构;阵列;金属催化法;气相沉积法;可控制备

Controllable preparation of one-dimensional tungsten nano-structure arrays
WANG Chao1, 2, HE Yue-hui1

1. Powder Metallurgy Research Institute, Central South University, Changsha 410083, China;
2. Central South University Press, Changsha 410083, China

Abstract:One-dimensional tungsten nano-structure arrays were successfully prepared by metal-catalyzed chemical vapor deposition method. Controllable preparation of W nanowire arrays was studied. The results show that the diameter of the W nanowire arrays is mainly decided by the influence of the catalyst and N2 flow. The diameter of the W nanowires correspondingly decreases with the reduction in size of the catalyst particles, or the reduction of the N2 flow rate. The length of the W nanowire arrays is mainly influenced by the growth time. The extension of the growth time will correspondingly increase the length of W nanowire arrays, which is beneficial to synthesis extra long W nanowire arrays. The density of the W nanowire arrays is mainly decided by the influence of the catalyst and N2 flow. The density of the W nanowires correspondingly increases with increasing the density of the catalyst particles or decreasing the WO3 particle size. The morphology of W nanowire arrays is mainly influenced by the growth temperature and the substrate material.

 

Key words: one-dimensional nano-materials; tungsten nano-structure; array; metal catalyzed method; chemical vapor deposition method; controllable preparation

ISSN 1004-0609
CN 43-1238/TG
CODEN: ZYJXFK

ISSN 1003-6326
CN 43-1239/TG
CODEN: TNMCEW

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